The Effect of Pull Speed and Heat Treatment on Thermal Donors in Cz?Silicon.

In silicon crystals manufactured by the Czochralski method, oxygen is incorporated as a contaminant originating primarily from dissolution of quartz crucible used to contain molten feedstock. The can be found either interstitials, agglomerates, or oxide particles. Particular kinds agglomerates are known lead formation thermal donors—electronic states in bandgap base material. These act sites for recombination excited charge carriers and called donors due their ability inject two electrons into conduction band excitation, leading enhanced electrical conductivity. Neither these features desirable Cz-Si manufacture. Herein, behavior function pull speed, position ingot, investigated. Thermal treatment provided, first then removal. aim investigate methods minimalizing incorporation crystal place how they removed. Hyperspectral imaging spectroscopy combined with Fourier-transform infrared used.